Наноструктуры
In SINP is working on the development of processes in the microscopic theory of superconducting nanostructures and devices based on them. The theoretical work focused on the study of electronic transport in nanostructures containing superconducting, normal and ferromagnetic materials.
Since 1966, in addition to conducting research studies of high-temperature plasma physics, aimed at creating a new class of instruments of physical electronics. Studies were carried out at atmospheric pressure non-self-discharge excited by an external ionization source. The studies were first obtained results allow to understand the electrodynamics of non-self-discharge processes and the impact on the parameters of the plasma gas lasers. These results have had a significant influence on the modern physics of gas discharge and gas discharge lasers.
Since the late 70's, work is underway to develop new approaches to creating plasma chemical reactors. As a result of these studies was the development of a number of new results, which are of fundamental scientific importance.
Today In SINP is working on the development of processes in the microscopic theory of superconducting nanostructures and devices based on them. The theoretical work focused on the study of electronic transport in nanostructures containing superconducting, normal and ferromagnetic materials. Interest in the problems of electron transport due to the existence of a number of quantum effects, which are not only observable, but practically significant. Developed a microscopic theory of the proximity effect of a superconductor with non-superconducting materials, provides the basis for the creation and development of modern production of superconducting circuits.
Work is underway to develop and create ultra-fast information processing devices. The first such devices were designed and fabricated at MSU in IRE RAS. Proposed, fabricated and investigated the original prototypes of nanoscale structures of digital and analog devices, quantum electronics. Developed and implemented the original methods of manufacture and research of nanostructures wide class. First in the world is made and investigated a single-electron transistor with resistive elements instead of the traditional tunnel junctions.
In SINP and the Physics Department of Moscow State University developed a stack single-electron transistor with a record-low noise.